Job Description

Job Description

This position is associated with the sale of Intels NAND memory and storage business to SK hynix (You can read more about the transaction in the press release - https://newsroom.intel.com/wp-content/uploads/sites/11/2020/10/nand-memory-news-q-a.pdf). The transaction will enhance the resources and potential of the business storage solutions, including client and enterprise SSDs, in the rapidly growing NAND Flash space amid the era of big data.

This is an exciting time to be at Intel come join our NAND team as a DTD NAND Reliability Development Manager and work on one of the most advanced 3DNAND and SSD technology portfolios in the world. As the global leader in the semiconductor industry, Intel possesses many industry-leading SSD technologies including the most capable Quadruple Level Cell (QLC) NAND Flash products. As a DTD NAND Reliability Development Manager, you will be part of a world-class team that will transition to lead the SSD business at SK hynix.

Candidates being hired for Phase 2

This position aligns to Phase 2 of the transaction, which includes NAND technology and component development along with fab operations. Employees aligned to Phase 2 will continue to be employed by Intel and will continue to develop NAND technology and components and manufacture NAND wafers at the fab. Phase 2 of the transaction is expected to close in March 2025, at which time employees aligned to this phase of the transaction will transition employment to SK hynix.

As a manager you will:

* Set priorities for the team, get results across boundaries, ensure an inclusive work environment, develop employees, and manage performance.
* Plan, provide resources for and direct activities in developing leading-edge NAND technology for cell array, CMOS and metal interconnection reliability modules before transferring to high volume manufacturing, meeting product qualification schedules, standards and cost.
* Manage a pool of TD reliability engineers and provide technical coaching in reliability model and scorecard development, experiment plan & execution, data analysis, MTS definition and rel goal setting.
* Partner with US array and fab process team to drive both process/trim solution for rel gap closure.
* Work with HVM partners to ensure success transfer and ramp of new technology into production.

Qualifications

Minimum Requirements:

5+ years work experience in Memory TD reliability or cell/array development area.
Preferred Requirements:

Semiconductor physics, material science, physics and chemical major background is a plus.

Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

Other Locations

PRC, Dalian

Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.

USExperienced HireJR0147972Santa Clara