Job Description

Microns vision is to transform how the world uses information to enrich life for all. Join an inclusive team focused on one thing: using our expertise in the relentless pursuit of innovation for customers and partners. The solutions we create help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can spark the very innovation we are pursuing.

Req. ID: 259343

As a Principal Engineer working on NAND cell reliability at Micron Technology, Inc., you will be responsible for delivering the next generation NAND technology meeting the highest quality standards required by customers. You will be in charge of defining and understanding the NAND device and product requirements to successfully meet the Joint Electron Device Engineering Council (JEDEC) and internal products qualification criteria and perform NAND cell array and test structures electrical characterization identify possible reliability issues. You will be responsible for developing, communicating, and coordinating the execution of high-volume electrical experiments to improve cell reliability with minimum impact on performance and yield. You will be part of a cross-functional team to address cell deficiencies and identify failure mechanisms and risks.

Your primary responsibilities will be:

* Drive the risk assessment of NAND cell reliability and summarize scorecards and identify the process/trim/test strategy to bridge the gaps for JEDEC and internal product qualification.
* Design experiments to identify and segment the limiting reliability mechanisms impacting NAND quality.
* Execute high volume electrical experiments (both wafer level and component level) and statistical data analysis to validate process/trims solutions required to close reliability gaps.
* Correlate NAND component and NAND-based solid-state drive electrical data to validate NAND quality against on-field usage applications.
* Update management and provide continuous feedback to process development and product engineers on the NAND reliability status and roadmap to bridge gaps.
* Contribute to develop forward-looking technology pathfinding for the next NAND generation, including reliability risk assessment and product capability projections, to identify innovative design and product features required to meet quality specifications.

Minimum Qualifications:

* A solid background in Device Physics.
* Strong knowledge and experience with non-volatile memory devices.
* Experience with device and product requirements for NAND cell.
* Knowledge or experience with the main scaling issues for NAND or other non-volatile memory devices.
* Knowledge or experience with typical NAND memories reliability detractors.
* Knowledge or experience with activation energy concepts for non-volatile memory devices data retention modeling.
* Ability to explain the main conduction mechanism affecting dielectric materials used in non-volatile memory technology.
* Knowledge or experience with semiconductor devices and processes, techniques, and technology.
* Knowledge or experience designing and executing high volume electrical experiments to improve cell performance and reliability and Design of Equipment theory.
* Knowledge or experience with typical electrical characterization equipment, such as parameter analyzer, CV-meter, or oscilloscope, and with non-volatile memory full array electrical characterization.
* Knowledge or experience with coding and scripting with common programming languages (Perl, Python, SAS-JSL).
* Knowledge or experience with three-level-cell (TLC) and quad-level-cell (QLC) memory technology and the trade-off between performance and reliability.
* Knowledge or experience with Monte Carlo code development using Matlab or similar software to perform advanced device modeling.
* Knowledge or experience in statistics, including the methodologies and techniques required to analyze high volume data.

Degree Required: Ph.D. or equivalent foreign education.

Academic Discipline(s): Electrical or Electronic Engineering

Experience Required: 3y preferred

About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions. Through our global brands Micron and Crucial our broad portfolio of high-performance memory and storage technologies, including DRAM, NAND, 3D XPoint memory and NOR, is transforming how the world uses information to enrich life. Backed by more than 40 years of technology leadership, our memory and storage solutions enable disruptive trends, including artificial intelligence, 5G, machine learning and autonomous vehicles, in key market segments like mobile, data center, client, consumer, industrial, graphics, automotive, and networking. Our common stock is traded on the Nasdaq under the MU symbol. To learn more visit micron.com/careers

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

Micron prohibits the use of child labor and complies with all applicable laws, rules, regulations and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.